Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-26
2007-06-26
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S174000, C257S356000, C257S357000, C257S358000, C257S359000, C257S360000, C361S310000, C361S310000
Reexamination Certificate
active
11116807
ABSTRACT:
The present invention provides an ESD protection device or structure that exploits the high conductivity of a heavily doped heterojunction base of a standard SiGe bipolar junction transistor (BJT) cell. This improved ESD protection scheme further uses the combination of trench isolation and buried subcollector layer of the SiGe BJT to confine ESD current, minimizing parasitic substrate leakage and achieving large forward voltages while imposing minimal parasitic capacitive loads on a protected active device. Since the ESD protection structure is formed from conventional SiGe BJT transistor cells through modification of the contact metallization, it can be fabricated in an available SiGe BiCMOS fabrication process without additional processing steps, and characterization data already available for the SiGe BJTs can be used to model the performance of the ESD protection devices.
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Morgan Lewis & Bockius
Soward Ida M.
WJ Communications, Inc.
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