Bonding pad structure

Details Bonding pad structure Bonding pad structure

2007-06-19

2007-06-19

Owens, Douglas W. (Department: 2821)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

C257S782000

Reexamination Certificate

active

11354795

ABSTRACT:
A substrate has a bonding region and a sensing region. A first dielectric layer is formed overlying the substrate and has a dielectric island surrounded by a ring-shaped trench. A first conductive layer is formed in the ring-shaped trench of the first dielectric layer. A passivation layer is formed overlying the first dielectric layer and has an opening, in which the opening corresponds to the bonding region and the sensing region and exposes the dielectric island and a part of the first conductive layer. A second conductive layer covers the opening of the passivation layer and is electrically connected to the first conductive layer.

REFERENCES:
patent: 4341594 (1982-07-01), Carlson et al.
patent: 6426555 (2002-07-01), Hsia et al.
patent: 6455943 (2002-09-01), Sheu et al.
patent: 6552438 (2003-04-01), Lee et al.
patent: 6566752 (2003-05-01), Hsin et al.
patent: 7057296 (2006-06-01), Hung et al.

Affiliated with

Also associated with

Rating

Bonding pad structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bonding pad structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bonding pad structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3845114