Low resistance contact in a semiconductor device

Details Low resistance contact in a semiconductor device Low resistance contact in a semiconductor device

2007-11-06

2007-11-06

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S666000, C257SE21627

Reexamination Certificate

active

11184074

ABSTRACT:
In a method for manufacturing a contact electrically contacting an electrically conductive silicon structure, a substrate with a surface is provided, the substrate having the silicon structure at the surface. Silicon oxide is grown selectively on at least part of the silicon structure. A layer is produced over the surface and the silicon oxide and an opening is produced in the layer, the opening abutting on the silicon oxide. The selectively grown silicon oxide is removed and the opening is filled with electrically conductive material, whereby the electrically conductive material forms the contact.

REFERENCES:
patent: 6827869 (2004-12-01), Podlesnik et al.
patent: 6979652 (2005-12-01), Khan et al.
patent: 61032569 (1986-02-01), None

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