Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition
Reexamination Certificate
2007-12-04
2007-12-04
Shah, Sanjiv (Department: 2185)
Electrical computers and digital processing systems: memory
Storage accessing and control
Specific memory composition
C365S185200, C365S185220, C365S185240, C365S185290, C365S185300, C365S185330
Reexamination Certificate
active
10940987
ABSTRACT:
A method for preventing the over-erase in a nonvolatile memory comprises the following steps. First, at least one normal cell of the nonvolatile memory and at least one reference cell that corresponds to the at least one normal cell are provided with a constant current. Second, the erasing threshold voltage of the at least one normal cell is determined, and then the at least one normal cell is erased to be of the erasing threshold voltage. By virtue of adding the constant current, the higher erasing threshold voltage can be acquired, and in consequence over-erase can be avoided.
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Elite Semiconductor Memory Technology Inc.
Hoffman & Baron LLP
Savla A. P.
Shah Sanjiv
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