Semiconductor integrated circuit device having power...

Details Semiconductor integrated circuit device having power... Semiconductor integrated circuit device having power...

2007-12-25

2007-12-25

Cho, James H. (Department: 2819)

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Field-effect transistor

C326S033000

Reexamination Certificate

active

11131181

ABSTRACT:
A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.

REFERENCES:
patent: 3739193 (1973-06-01), Pryor
patent: 4473762 (1984-09-01), Iwahashi et al.
patent: 4624006 (1986-11-01), Rempfer et al.
patent: 4797580 (1989-01-01), Sunter
patent: 4816705 (1989-03-01), Ohba et al.
patent: 4825106 (1989-04-01), Tipon et al.
patent: 4849658 (1989-07-01), Iwamura et al.
patent: 4859870 (1989-08-01), Wong et al.
patent: 4894558 (1990-01-01), Conkle et al.
patent: 4999519 (1991-03-01), Kitsukawa et al.
patent: 5034629 (1991-07-01), Kanugasa et al.
patent: 5051625 (1991-09-01), Ikeda et al.
patent: 5101119 (1992-03-01), Yoshimori et al.
patent: 5115150 (1992-05-01), Ludwig
patent: 5179298 (1993-01-01), Hirano et al.
patent: 5258666 (1993-11-01), Furuki
patent: 5274601 (1993-12-01), Kawahara et al.
patent: 5349666 (1994-09-01), Adachi et al.
patent: 5355503 (1994-10-01), Soffel et al.
patent: 5359243 (1994-10-01), Norman
patent: 5461338 (1995-10-01), Hirayama et al.
patent: 5486774 (1996-01-01), Douseki et al.
patent: 5526313 (1996-06-01), Etoh et al.
patent: 5557231 (1996-09-01), Yamaguchi et al.
patent: 5583457 (1996-12-01), Honguchi et al.
patent: 5726475 (1998-03-01), Sawada et al.
patent: 5828235 (1998-10-01), Horiguchi et al.
patent: 5880604 (1999-03-01), Kawahara et al.
patent: 57-081728 (1982-05-01), None
patent: 58070333 (1983-04-01), None
patent: 60-16021 (1985-01-01), None
patent: 60-48525 (1985-03-01), None
patent: 60-83421 (1985-05-01), None
patent: 01-181225 (1989-07-01), None
patent: 2-143608 (1990-06-01), None
patent: 2-162824 (1990-06-01), None
patent: 2-179121 (1990-07-01), None
patent: 2-246516 (1990-10-01), None
patent: 3-49409 (1991-03-01), None
Symposium on ULSI Circuits, Digest of Technical Papers, Jun. 1992, pp. 82-83.
IEEE International Solid-State Circuits Conference, ISSCC Digest of Technical Papers, Feb. 1985, pp. 254-255 and 358-359.
Nikkei Electronics, Sep. 2, 1991, pp. 106-107.
1989 International Symposium on VLSI Technology, Systems and Application, Proceedings of Technical Papers, pp. 188-192 (May 1989).
ISSCC Digest of Technical Papers, pp. 248-249, Feb. 1989.
Reviews and Prospects of Deep Sub Micron DRAM Technology, 1991 International Conference on Solid State Devices and Materials, Yokohama 1991, pp. 468-471.
Intro to VLSI Systems, “Scaling Down the Dimensions of MOS Circuits and Systems,” Mead et al, pp. 33-37, 1980.
ISSCC93, Session 3, “256Mb DRAM Technologies for File Applications,” G. Kitsukawa et al, plublished Feb. 24, 1993.
Symp. VLSI Circ. 93, “Switched-Source-Impedance CMOS Circuit for Law Standby Substhreshold Current Gia-Scale LSI's.” M. Horiguchi et al, published May 19, 1993.
Simp. VLSI Circ. 93, “Subthreshold-Current Reduction Circuits for Multi-Gigabit DRAM's,” T. Sakata et al, published May 19, 1993.
Symp. VLSI Circ. 93, “Stand-by Active Mode Logic for Sub-1 V 1G/4Gb DRAMs.” D. Takashima et al, published May 19, 1993.
Mano. Computer Engineering: Hardware Design. Prentice Hall, pp. 122-124, 1988.

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