Semiconductor laser device and manufacturing method thereof

Details Semiconductor laser device and manufacturing method thereof Semiconductor laser device and manufacturing method thereof

2007-10-09

2007-10-09

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S616000, C257S617000, C257S506000, C257S507000, C257SE21563, C257SE21568, C257SE21569, C438S150000, C438S459000, C438S151000, C438S455000, C438S973000, C438S977000

Reexamination Certificate

active

11109787

ABSTRACT:
It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate1, an n-type GaN layer2, an n-type AlGaN cladding layer3, a n-type GaN guide layer4, an InGaN multiple quantum well active layer5, an undoped-GaN guide layer6, a p-type AlGaN electron overflow suppression layer7, a p-type GaN guide layer8, a SiO2blocking layer9, an Ni/ITO cladding layer electrode10as a transparent electrode, a Ti/Au pad electrode11, and a Ti/Al/Ni/Au electrode12. The SiO2blocking layer9is formed above the InGaN multiple quantum well active layer5so as to have an opening. The Ni/ITO cladding layer electrode10is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.

REFERENCES:
patent: 5567960 (1996-10-01), Ishibashi et al.
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 2003/0052326 (2003-03-01), Ueda et al.
patent: 2004/0184497 (2004-09-01), Kneissl et al.
patent: 8-97507 (1996-04-01), None
English Language Abstract of JP 8-97507.
S. Nakamura et al., “the Blue Laser Diode”, Springer-Verlag Berlin Heidelberg New York, pp. 254-259 (1997).

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