Semiconductor device having a recess gate for improved...

Details Semiconductor device having a recess gate for improved... Semiconductor device having a recess gate for improved...

2007-11-27

2007-11-27

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S305000, C438S306000, C438S524000, C438S525000, C438S527000, C438S700000

Reexamination Certificate

active

11287594

ABSTRACT:
A semiconductor device having a recess gate is formed by first forming a recess below the upper surface of the substrate. A spacer is formed at each sidewall of the recess. An impurity doping area is formed in a source area. A first LDD area is formed in a drain area. A gate comprising a gate insulating layer and a gate conductive layer is then formed in the recess. A second LDD area is formed on the upper surface of the semiconductor substrate. A gate spacer is formed at each sidewall of the gate. Then a source/drain area having an asymmetrical structure is formed on each side of the gate.

REFERENCES:
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patent: 6252277 (2001-06-01), Chan et al.
patent: 2001/0039092 (2001-11-01), Morimoto et al.
patent: 2005/0205897 (2005-09-01), Depetro et al.
patent: 2006/0284225 (2006-12-01), Popp et al.
patent: 2006/0286757 (2006-12-01), Power et al.
patent: 1992-0022518 (1992-12-01), None
patent: 1019940002400 (1994-03-01), None
patent: 100137811 (1998-02-01), None
Korean Patent Gazette, Jan. 2007.

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