Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-10-02
2007-10-02
Phan, Trong (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S185250
Reexamination Certificate
active
11240620
ABSTRACT:
A read circuit includes a precharge circuit, a discharge circuit, and a sense amplifier. The precharge circuit includes a first transistor which has a gate connected to the bit line, a second transistor which has a gate connected to the bit line, the second transistor having a current path one end of which is connected to one end of a current path in the first transistor, a third transistor which has a current path one end of which is connected to the other end of the current path in the first transistor, the other end of the current path in the third transistor being connected to a power supply, and a fourth transistor which has a gate connected to a junction between the current paths in the first and second transistors and which controls a charge level of the bit line.
REFERENCES:
patent: 6021072 (2000-02-01), Takeda et al.
patent: 6031774 (2000-02-01), Chung
patent: 6226215 (2001-05-01), Yoon
patent: 7027340 (2006-04-01), Huang
patent: 7061803 (2006-06-01), Kim
patent: 7126869 (2006-10-01), Chou
Rino Micheloni, et al., “The Flash Memory Read Path: Building Blocks and Critical Aspects”, Proceedings of the IEEE, vol. 91, No. 4, Apr. 2003, pp. 537-553.
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