Semiconductor memory devices and methods of delaying data...

Static information storage and retrieval – Read/write circuit – Signals

Reexamination Certificate

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C365S230020, C365S230030

Reexamination Certificate

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11212843

ABSTRACT:
According to the example embodiments of semiconductor memory devices and the methods of delaying a sample data signal of the present invention, the delay characteristics of the data sampling signal (FRT) are adjusted based on the location of the memory unit in a row direction and/or in a column direction with respect to the input/output sense amplifier.

REFERENCES:
patent: 6212109 (2001-04-01), Proebsting
patent: 6314029 (2001-11-01), Ko et al.
patent: 6359826 (2002-03-01), Kim
patent: 7054223 (2006-05-01), Takahashi et al.
patent: 2000-315389 (2000-11-01), None
patent: 1020010068104 (2001-07-01), None
Korean Office Action dated Jan. 31, 2006 for Korean Application No. 10-2004-0070178.

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