Method of making a nanogap for variable capacitive elements,...

Details Method of making a nanogap for variable capacitive elements,... Method of making a nanogap for variable capacitive elements,...

2007-02-06

2007-02-06

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S052000, C438S053000

Reexamination Certificate

active

10418617

ABSTRACT:
A method for fabricating a variable capacitive device including providing a base silicon-bearing compound electrode which is vertically-inclined with respect to a substrate, depositing a sacrificial layer on the base electrode, depositing a silicon-bearing compound electrode on the sacrificial layer which is also vertically-inclined with respect to the substrate, and removing the sacrificial layer from between the base silicon-bearing compound electrode and the grown silicon-bearing compound electrode. A variable capacitive device having a fixed vertically-inclined silicon-bearing compound electrode and a movable vertically-inclined silicon-bearing compound electrode produced by arranging a sacrificial layer on a base silicon-bearing compound electrode, depositing a grown silicon-bearing compound electrode on the sacrificial layer, and etching the sacrificial layer. Between the fixed silicon-bearing compound and the movable silicon-bearing compound electrode is a nanogap, the nanogap having a uniform width.

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