Method for doping structures in FinFET devices

Details Method for doping structures in FinFET devices Method for doping structures in FinFET devices

2007-06-26

2007-06-26

Richards, N. Drew (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S275000, C438S548000

Reexamination Certificate

active

10614051

ABSTRACT:
A method for doping fin structures in FinFET devices includes forming a first glass layer on the fin structure of a first area and a second area. The method further includes removing the first glass layer from the second area, forming a second glass layer on the fin structure of the first area and the second area, and annealing the first area and the second area to dope the fin structures.

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