Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-07
2007-08-07
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S301000
Reexamination Certificate
active
10766587
ABSTRACT:
A semiconductor integrated circuit has a CMOS transistor formed on a first conductivity type semiconductor film provided on a first conductivity type supporting substrate through an embedded insulating film. Thermal oxidation is conducted to form a LOCOS for element separation between transistors in the semiconductor film. A gate oxide film of a second conductivity type transistor is formed over the insulating film. A first conductivity type impurity region is formed between the gate oxide film and the embedded insulating film in a region where the second conductivity type transistor is to be formed. A first conductivity type impurity region having a higher density than that of the first conductivity type impurity region is formed in a middle depth portion of the semiconductor film serving as the proximal region to a drain in the first conductivity type impurity region. A polysilicon film is formed on the gate oxide film and etching the polysilicon film so as to form a gate electrode of the second conductivity type transistor. Ion implantation is performed through the gate electrode so as to form a second conductivity type impurity region in each of a source region and a drain region.
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Wake Miwa
Yoshida Yoshifumi
Adams & Wilks
Seiko Instruments Inc.
Smith Zandra V.
Tran Thanh Y.
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