Semiconductor devices having diffusion barrier regions and...

Details Semiconductor devices having diffusion barrier regions and... Semiconductor devices having diffusion barrier regions and...

2007-05-15

2007-05-15

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S289000, C438S514000

Reexamination Certificate

active

10944316

ABSTRACT:
The present disclosure provides an example of a semiconductor device. In addition, a method for fabricating a semiconductor device is outlined. The semiconductor device may be fabricated by providing a semiconductor substrate, forming a gate over the substrate, forming diffusion barrier ion regions, forming halo regions, forming a source, and forming a drain.

REFERENCES:
patent: 6417547 (2002-07-01), Kang
patent: 6518136 (2003-02-01), Lee et al.
patent: 6596554 (2003-07-01), Unnikrishnan
patent: 2004/0004250 (2004-01-01), Momiyama et al.

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