Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-02-27
2007-02-27
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S423000, C438S455000, C438S480000, C438S481000, C438S760000
Reexamination Certificate
active
10397447
ABSTRACT:
A method of forming an SOI semiconductor substrate and the SOI semiconductor substrate formed thereby, is provided. The method includes forming sequentially buried oxide, diffusion barrier and SOI layers on a semiconductor substrate. The diffusion barrier layer is formed by an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer. The diffusion barrier layer serves to prevent impurities implanted into the SOI layer from being diffused into the buried oxide layer or the semiconductor substrate.
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Bae Geum-Jong
Kim Ki-Chul
Kim Sang-Su
Lee Jung-Il
Rhee Hwa-Sung
F. Chau & Associates LLC
Thomas Toniae M.
Wilczewski M.
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