Semiconductor storage device and method of manufacturing the...

Details Semiconductor storage device and method of manufacturing the... Semiconductor storage device and method of manufacturing the...

2007-11-06

2007-11-06

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C257SE21010, C257SE21436, C257SE27104, C257SE21009, C257SE21272

Reexamination Certificate

active

11202032

ABSTRACT:
A method of manufacturing a semiconductor storage device having a capacitive element having a dielectric layer having a perovskite-type crystal structure represented by general formula ABO3and a lower electrode and an upper electrode disposed so as to sandwich the dielectric layer therebetween; in the method are carried out forming, on a lower electrode conductive layer, using a MOCVD method, an initial nucleus containing at least one metallic element the same as a metallic element in the dielectric layer, forming, on the initial nucleus, using a MOCVD method, a buffer layer containing at least one metallic element the same as the metallic element contained in both the initial nucleus and the dielectric layer, in a higher content than the content of this metallic element contained in the initial nucleus, and forming, on the buffer layer, using a MOCVD method, the dielectric layer having a perovskite-type crystal structure.

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