Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-05
2007-06-05
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S250000, C438S706000
Reexamination Certificate
active
10964732
ABSTRACT:
Exemplary embodiments provide a method of manufacturing a substrate for an electro-optical device. The method includes sequentially depositing on the substrate a lower conductive layer which is a lower electrode of the capacitor, an intermediate layer which is a dielectric film of the capacitor, and an upper conductive layer which is an upper electrode of the capacitor, in which the lower conductive layer is made of a material having an etching rate lower than an etching rate of a material of the upper conductive layer with respect to a predetermined etching agent; forming a mask having a predetermined planar pattern on the upper conductive layer; patterning the upper conductive layer, the intermediate layer and the lower conductive layer by etching with the mask, in which the etching agent is applied to at least the upper conductive layer and the lower conductive layer; and removing the mask. Accordingly, it is possible to simply manufacture a high reliable capacitor on the substrate.
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Mulpuri Savitri
Oliff & Berridg,e PLC
Seiko Epson Corporation
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