Method of fabricating deep trench capacitor

Details Method of fabricating deep trench capacitor Method of fabricating deep trench capacitor

2007-01-16

2007-01-16

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C438S270000

Reexamination Certificate

active

10904479

ABSTRACT:
A method of fabrication deep trench capacitors includes forming a plurality of deep trenches in a substrate. A bottom electrode is formed in the substrate surrounding the bottom of each deep trench. A capacitor dielectric layer and a first conductive layer are formed at the bottom of each deep trench. A collar oxide layer is formed on the sidewall of the deep trench exposed by the first conductive layer. A second conductive layer fills each deep trench. An opening is formed in a region predetermined for an isolation structure between adjacent deep trenches, wherein the depth of the opening is greater than that of the isolation structure. An isolation layer is filled in the opening.

REFERENCES:
patent: 6680237 (2004-01-01), Chen et al.
patent: 2006/0051916 (2006-03-01), Chung

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