Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-27
2007-02-27
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S962000, C257S314000, C257SE27011, C977S774000, C977S943000
Reexamination Certificate
active
11035913
ABSTRACT:
An integrated circuit is formed by identifying multiple regions, each having transistors that have a gate oxide thickness that differs between the multiple regions. One of the regions includes transistors having a nanocluster layer and another of the regions includes transistors with a thin gate oxide used for logic functions. Formation of the gate oxides of the transistors is sequenced based upon the gate oxide thickness and function of the transistors. Thin gate oxides for at least one region of transistors are formed after the formation of gate oxides for the region including the transistors having the nanocluster layer.
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Related Application 10/876,805 filed Jun. 25, 2004.
Related Application 10/663,621 filed Sep. 16, 2003.
Rao Rajesh A.
Steimle Robert F.
Baumeister B. William
Freescale Semiconductor Inc.
Hill Susan C.
King Robert L.
Such Matthew W.
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