Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-06-05

2007-06-05

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S303000

Reexamination Certificate

active

11201090

ABSTRACT:
A semiconductor device comprises: a lower contact electrode1; an adhesion improving layer3formed on the lower contact electrode1; and a capacitor including a lower electrode4in a projected structure formed on the adhesion improving layer3, a capacitor dielectric film5formed on the lower electrode4, and an upper electrode6formed on the capacitor dielectric film5, in which a gap is formed on a sidewall of the adhesion improving layer3. The gap is at least partially left as a cavity7. The gap insulates the upper electrode6and the adhesion improving layer3by the cavity7.

REFERENCES:
patent: 5654224 (1997-08-01), Figura et al.
patent: 5918120 (1999-06-01), Huang

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