Single-pole component manufacturing

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S138000, C438S272000, C438S526000, C257SE21629

Reexamination Certificate

active

11115791

ABSTRACT:
The invention relates to a vertical-type single-pole component, comprising regions with a first type of conductivity which are embedded in a thick layer with a second type of conductivity. Said regions are distributed over at least one same horizontal level and are independent of each other. The regions also underlie an insulating material.

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patent: 2003/0122188 (2003-07-01), Blanchard
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Interntational Search Report from related International application No. PCT/FR00/03655, filed Dec. 21, 2000.
Patent Abstracts of Japan, vol. 007, No. 027 (E-156), Feb. 3, 1983 and JP 57 181172 A (Tokyo Shibaura Denki KK), Nov. 8, 1982.

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