Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-06
2007-02-06
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S388000, C257S384000, C257S383000, C257S382000, C257S754000, C257S757000
Reexamination Certificate
active
10905101
ABSTRACT:
A semiconductor structure and method that is capable of generating a local mechanical gate stress for channel mobility modification are provided. The semiconductor structure includes at least one NFET and at least one PFET on a surface of a semiconductor substrate. The at least one NFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer, a Si-containing second gate electrode layer and a compressive metal, and the at least one PFET has a gate stack structure comprising a gate dielectric, a first gate electrode layer, a barrier layer and a tensile metal or a silicide.
REFERENCES:
patent: 3602841 (1971-08-01), McGroddy
patent: 4665415 (1987-05-01), Esaki et al.
patent: 4853076 (1989-08-01), Tsaur et al.
patent: 4855245 (1989-08-01), Neppl et al.
patent: 4952524 (1990-08-01), Lee et al.
patent: 4958213 (1990-09-01), Eklund et al.
patent: 5006913 (1991-04-01), Sugahara et al.
patent: 5060030 (1991-10-01), Hoke
patent: 5081513 (1992-01-01), Jackson et al.
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5134085 (1992-07-01), Gilgen et al.
patent: 5310446 (1994-05-01), Konishi et al.
patent: 5354695 (1994-10-01), Leedy
patent: 5371399 (1994-12-01), Burroughes et al.
patent: 5391510 (1995-02-01), Hsu et al.
patent: 5459346 (1995-10-01), Asakawa et al.
patent: 5471948 (1995-12-01), Burroughes et al.
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5561302 (1996-10-01), Candelaria
patent: 5565697 (1996-10-01), Asakawa et al.
patent: 5571741 (1996-11-01), Leedy
patent: 5592007 (1997-01-01), Leedy
patent: 5592018 (1997-01-01), Leedy
patent: 5670798 (1997-09-01), Schetzina
patent: 5679965 (1997-10-01), Schetzina
patent: 5818092 (1998-10-01), Bai et al.
patent: 5960297 (1999-09-01), Saki
patent: 5989978 (1999-11-01), Peidous
patent: 6008126 (1999-12-01), Leedy
patent: 6025280 (2000-02-01), Brady et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6221735 (2001-04-01), Manley et al.
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6246095 (2001-06-01), Brady et al.
patent: 6255169 (2001-07-01), Li et al.
patent: 6261964 (2001-07-01), Wu et al.
patent: 6361885 (2002-03-01), Chou
patent: 6362082 (2002-03-01), Doyle et al.
patent: 6368931 (2002-04-01), Kuhn et al.
patent: 6403486 (2002-06-01), Lou
patent: 6403975 (2002-06-01), Brunner et al.
patent: 6509618 (2003-01-01), Jan et al.
patent: 6521964 (2003-02-01), Jan et al.
patent: 6531369 (2003-03-01), Ozkan et al.
patent: 6531740 (2003-03-01), Bosco et al.
patent: 6977194 (2005-12-01), Belyansky et al.
patent: 7053400 (2006-05-01), Sun et al.
patent: 2001/0009784 (2001-07-01), Ma et al.
patent: 2002/0074598 (2002-06-01), Doyle et al.
patent: 2002/0086472 (2002-07-01), Roberds et al.
patent: 2002/0086497 (2002-07-01), Kwok
patent: 2002/0090791 (2002-07-01), Doyle et al.
patent: 2003/0032261 (2003-02-01), Yeh et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2003/0057184 (2003-03-01), Yu et al.
patent: 2003/0067035 (2003-04-01), Tews et al.
patent: 2003/0151098 (2003-08-01), Nishida et al.
patent: 2005/0051855 (2005-03-01), Kanegae et al.
patent: 2005/0145950 (2005-07-01), Chidambarrao et al.
patent: 2005/0214998 (2005-09-01), Chen et al.
patent: 2005/0282325 (2005-12-01), Belyansky et al.
patent: 2006/0057787 (2006-03-01), Doris et al.
Cabral, Jr. Cyril
Doris Bruce B.
Kanarsky Thomas S.
Liu Xiao H.
Zhu Huilong
Abate Esq. Joseph P.
Diaz José R.
Parker Kenneth
Scully , Scott, Murphy & Presser, P.C.
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