Method and apparatus for producing polycrystalline silicon...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

10530026

ABSTRACT:
A method for manufacturing a thin-film semiconductor includes polycrystallization to focus visible light pulse laser into a line shape on a surface of an object to be irradiated, and repeat irradiation with displacing the visible light pulse laser such that a line-shaped irradiated region is overlapped with a region irradiated at a next timing in a width direction of the line-shaped irradiated region, to form a polycrystalline silicon film on the surface of the object. The step of polycrystallization applies ultraviolet light pulse laser onto a second irradiated region partially overlapping the first irradiated region while or before the visible light pulse laser is applied to the first irradiated region.

REFERENCES:
patent: 6372039 (2002-04-01), Okumura et al.
patent: 6566683 (2003-05-01), Ogawa et al.
patent: 6770546 (2004-08-01), Yamazaki
patent: 6825069 (2004-11-01), Abe
patent: 2003/0032222 (2003-02-01), Okumura
patent: 11-274095 (1999-10-01), None
patent: 11-298005 (1999-10-01), None
patent: 2000-012484 (2000-01-01), None
patent: 2000-286195 (2000-10-01), None
patent: 2001-035806 (2001-02-01), None
patent: 2001-044120 (2001-02-01), None
patent: 2003-068644 (2003-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for producing polycrystalline silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for producing polycrystalline silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for producing polycrystalline silicon... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3810700

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.