Semiconductor devices with composite etch stop layers and...

Details Semiconductor devices with composite etch stop layers and... Semiconductor devices with composite etch stop layers and...

2007-07-31

2007-07-31

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S637000, C257S642000, C257S760000, C257SE21249

Reexamination Certificate

active

10995923

ABSTRACT:
Semiconductor devices with composite etch stop layers and methods of fabrication thereof. An semiconductor device with a composite etch stop layer includes a substrate having a conductive member, a first etch stop layer on the substrate and the conductive member, a second etch stop layer and a dielectric layer sequentially over the second etch stop layer, having a conductive layer therein down through the dielectric layer, the second etch stop layer and the first etch stop layer to the conductive member.

REFERENCES:
patent: 6265780 (2001-07-01), Yew et al.
patent: 6525428 (2003-02-01), Ngo et al.
patent: 6798043 (2004-09-01), Steiner et al.
patent: 200411765 (2004-07-01), None

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