Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-05-08

2007-05-08

Chowdhury, Tarifur (Department: 2112)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S151000, C438S241000, C438S258000, C438S283000, C257S270000, C257S750000

Reexamination Certificate

active

11284184

ABSTRACT:
A manufacturing method of a semiconductor device disclosed herein comprises: forming a first protrusion; forming a second protrusion which is higher than the first protrusion; forming a first sidewall on a side surface of the second protrusion; forming a first film so that a surface of the first film is located lower than the second protrusion; forming a mask on a side surface of the first sidewall on a side surface of the second protrusion which protrudes from the surface of the first film; and etching the first film with the mask so as to form a second sidewall on the side surface of the first sidewall on the side surface of the second protrusion but not to form the second sidewall on a side surface of the first protrusion, the second sidewall being formed of the mask and the first film.

REFERENCES:
patent: 5554888 (1996-09-01), Kato
patent: 5804848 (1998-09-01), Mukai
patent: 2005/0202618 (2005-09-01), Yagishita
patent: 2005/0202678 (2005-09-01), Abrams et al.
patent: 2002-009289 (2002-01-01), None
patent: 2005-294789 (2005-10-01), None

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