Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-09
2007-01-09
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S216000, C438S785000, C257SE21010
Reexamination Certificate
active
11064648
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer that contacts a metal oxide layer. The metal oxide layer is generated by forming a metal layer, then oxidizing the metal layer.
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Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Doyle Brian S.
Intel Corporation
Plimier Michael D.
Sarkar Asok K.
Yevsikov Victor V.
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