Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-05
2007-06-05
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S489000, C438S458000, C438S689000
Reexamination Certificate
active
10711399
ABSTRACT:
A method of fabricating micro-chips, including: (a) providing a substrate; (b) forming a first single-crystal layer on a top surface of the substrate; (c) forming a second single-crystal layer on a top surface of the first single-crystal layer; (d) forming integrated circuits in the second single-crystal layer; (e) forming a set of intersecting trenches in the second-single crystal layer to form single-crystal islands, each single-crystal island containing one or more of the integrated circuits, the first single-crystal layer exposed in a bottom of the trench; and (f) removing the first single-crystal layer in order to separate the single-crystal islands from the substrate.
REFERENCES:
patent: 6331444 (2001-12-01), Ferrari et al.
patent: 6764936 (2004-07-01), Daneman et al.
Anderson Brent A.
Nowak Edward J.
Canale Anthony J.
Luu Chuong Anh
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