Methods and apparatus for wordline protection in flash...

Details Methods and apparatus for wordline protection in flash... Methods and apparatus for wordline protection in flash...

2007-01-09

2007-01-09

Malsawma, Lex H. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

10839614

ABSTRACT:
Methods and structures are presented for protecting flash memory wordlines and memory cells from process-related charging during fabrication. Undoped polysilicon is formed at the ends of doped polysilicon wordlines to create resistors through which process charges are discharged to a doped polysilicon discharge structure coupled with a substrate. The wordlines, resistors, and the discharge structure can be formed as a unitary patterned polysilicon structure, where the wordline and discharge portions are selectively doped to be conductive and the resistor portions are substantially undoped to provide a resistance high enough to allow normal cell operation after fabrication while providing a discharge path for process-related charging during fabrication.

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International Search Report, Int'l Application No. PCT/US2005/004583, Int'l Filing Date Nov. 2, 2005, 3 pgs.

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