Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-24
2007-04-24
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S108000, C438S622000, C438S623000, C438S624000, C438S625000, C438S626000, C438S627000, C438S628000, C438S629000, C438S613000, C257S757000, C257S772000, C257S777000, C257S778000, C257S779000, C257S780000
Reexamination Certificate
active
11144974
ABSTRACT:
An apparatus comprising: a die having a top metal layer, the top metal layer comprised of at least a first metal line and a second metal line; a passivation layer covering the top metal layer; a C4 bump on the passivation layer; and a first passivation opening and a second passivation opening in the passivation layer, the first passivation opening to connect the first metal line to the C4 bump, and the second passivation opening to connect the second metal line to the C4 bump.
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Bohr Mark T.
Martell Robert W.
Intel Corporation
Jr. Carl Whitehead
Mitchell James M.
Wheeler Cyndi M.
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