Flash memory device

Details Flash memory device Flash memory device

2007-03-27

2007-03-27

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000

Reexamination Certificate

active

10614177

ABSTRACT:
A non-volatile memory device includes a substrate, an insulating layer, a fin, an oxide layer, spacers and one or more control gates. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The oxide layer is formed on the fin and acts as a tunnel oxide for the memory device. The spacers are formed adjacent the side surfaces of the fin and the control gates are formed adjacent the spacers. The spacers act as floating gate electrodes for the non-volatile memory device.

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