SONOS memory device

Details SONOS memory device SONOS memory device

2007-03-06

2007-03-06

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

10867706

ABSTRACT:
A SONOS memory device, and a method of erasing data from the same, includes injecting charge carriers of a second sign into a trapping film, which traps charge carriers of a first sign to store data therein. The charge carriers of the second sign are generated by an electric field formed between one of a first and second electrodes contacting at least one bit line and a gate electrode contacting a word line. A blocking film may be provided between the gate electrode and the trapping film. The charge carriers of the second sign may be hot holes. This erasing improves erasing speed, thereby improving performance of the SONOS memory device.

REFERENCES:
patent: 6847556 (2005-01-01), Cho
patent: 2001/0021133 (2001-09-01), Iijima
patent: 2004/0257880 (2004-12-01), Yeh et al.

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