Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-02
2007-01-02
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S244000, C438S245000, C438S246000, C438S241000, C257SE21651
Reexamination Certificate
active
11053508
ABSTRACT:
A trench capacitor with improved strap is disclosed. The strap is located above the top surface of the capacitor. The top surface of the trench capacitor, which is formed by the top surfaces of the collar and storage plate, is planar. By locating the strap on a planar surface, the divot present in conventional strap processes is avoided. This results in improved strap reliability and device performance.
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Beintner Jochen
Kudelka Stephan
Tews Helmut
Infineon Technologies Aktiengesellschaft
Sarkar Asok K.
Slater & Matsil L.L.P.
Yevsikov Victor V.
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