Method of forming source contact of flash memory device

Details Method of forming source contact of flash memory device Method of forming source contact of flash memory device

2007-09-11

2007-09-11

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21690, C257S021000

Reexamination Certificate

active

11138694

ABSTRACT:
The present invention relates to a method of forming a source contact of a flash memory device. According to the present invention, the method includes the steps of forming a first interlayer insulating film on a semiconductor substrate in which first junction regions and second junction regions both of which are formed in a cell transistor of a cell region, a gate electrode patter for SSL of the cell region, a gate electrode pattern for DSL of the cell region, and a gate electrode pattern for peripheral circuits of a peripheral region, patterning the first interlayer insulating film to form a source contact hole through which the first and second junction regions are exposed on one sides of the gate electrode pattern of SSL, forming a film having a tungsten silicide film on the entire surface in which the source contact hole is formed, and performing a polishing process until the first interlayer insulating film is exposed to bury only the source contact hole with the film having the tungsten silicide film, thereby forming a source contact.

REFERENCES:
patent: 6133096 (2000-10-01), Su et al.
patent: 6146742 (2000-11-01), Hsieh et al.
patent: 6551928 (2003-04-01), Wu
patent: 6605530 (2003-08-01), Nakamura et al.
patent: 2002/0014205 (2002-02-01), Shin et al.
patent: 2002/0115256 (2002-08-01), Lee et al.
patent: 2002/0141242 (2002-10-01), Noguchi et al.

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