Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2007-09-11
2007-09-11
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S687000, C438S798000
Reexamination Certificate
active
10900355
ABSTRACT:
In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection17with a source gas comprising a nitrogen element being used, a copper nitride layer24is formed, and thereafter a silicon nitride film18is formed. Hereat, under the copper nitride layer24, a thin copper silicide layer25is formed.
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Aoki Hidemitsu
Ohto Koichi
Okada Norio
Tanikuni Takamasa
Tomimori Hiroaki
Garcia Joannie Adelle
NEC Electronics Corporation
Smith Matthew
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