Semiconductor device with rare metal electrode

Details Semiconductor device with rare metal electrode Semiconductor device with rare metal electrode

2007-01-30

2007-01-30

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S386000, C257S296000, C257S301000, C257SE21008

Reexamination Certificate

active

11100508

ABSTRACT:
A method of manufacturing a semiconductor device, includes the steps of: (a) forming a first inter-level insulating film on a semiconductor substrate formed with semiconductor elements; (b) forming a contact hole through the first inter-level insulating film; (c) forming a plug made of conductive material capable of being nitrided, the plug being embedded in the contact hole; and (d) heating the semiconductor substrate in a nitriding atmosphere to nitride the plug from a surface thereof. This semiconductor device manufacture method can prevent breakdown of a plug when a capacitor is formed on the plug.

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Japanese Office Action mailed on May 16, 2006, issued in corresponding Japanese patent application No. 2000-255708.

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