Method of fabricating flash memory device

Details Method of fabricating flash memory device Method of fabricating flash memory device

2007-05-08

2007-05-08

Doan, Theresa T. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000

Reexamination Certificate

active

11019300

ABSTRACT:
The present invention provides a method of fabricating a flash memory device, in which floating gates in neighbor cells are separated from each other without using photolithography, which enhances electrical characteristics of the device, and which facilitates a cell size reduction. The present invention includes forming a mask defining a trench forming area on a semiconductor substrate, forming a trench in the semiconductor layer by removing a portion of the semiconductor layer using the mask, forming a device isolation layer filling up the trench to maintain an effective isolation layer thickness exceeding a predefined thickness, removing the mask, forming a conductor layer over the substrate including the device isolation layer, planarizing the conductor layer and the device isolation layer to lie in a same plane, and forming an insulating layer over the substrate including the conductor patterns.

REFERENCES:
patent: 6448606 (2002-09-01), Yu et al.
patent: 6781189 (2004-08-01), Taylor
patent: 6878588 (2005-04-01), Dong et al.

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