Method for programming phase-change memory array to set...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Reexamination Certificate

active

11070196

ABSTRACT:
A method for programming a phase-change memory array and circuit of a phase-change memory device, each having a plurality of phase-change memory cells, may enable all the phase-change memory cells therein to be changed or set at a set resistance state, and may reduce the time needed to change the phase-change memory array to the set resistance state. In the method, a set current pulse having first through nthstages may be applied to the cells of the array to change the cells to the set resistance state. A minimum current level of the set current pulse applied to the phase-change memory cells in any stage may be higher than a reference current level for the cells of the array. A given current level of the set current pulse may be sequentially reduced from stage to stage.

REFERENCES:
patent: 6487113 (2002-11-01), Park et al.
patent: 6570784 (2003-05-01), Lowrey
patent: 6625054 (2003-09-01), Lowrey et al.
patent: 6928022 (2005-08-01), Cho et al.
patent: 2004/0228159 (2004-11-01), Kostylev et al.
patent: 2005/0141261 (2005-06-01), Ahn
patent: 2002-203392 (2002-07-01), None

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