Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-09-25
2007-09-25
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
Reexamination Certificate
active
11070196
ABSTRACT:
A method for programming a phase-change memory array and circuit of a phase-change memory device, each having a plurality of phase-change memory cells, may enable all the phase-change memory cells therein to be changed or set at a set resistance state, and may reduce the time needed to change the phase-change memory array to the set resistance state. In the method, a set current pulse having first through nthstages may be applied to the cells of the array to change the cells to the set resistance state. A minimum current level of the set current pulse applied to the phase-change memory cells in any stage may be higher than a reference current level for the cells of the array. A given current level of the set current pulse may be sequentially reduced from stage to stage.
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Cho Beak-Hyung
Choi Byung-Gil
Kim Du-Eung
Kwak Choong-Keun
Harness Dickey & Pierce
Samsung Electronics Co,. Ltd.
Tran Anthan T
Zarabian Amir
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