Method of fabricating gate electrode of semiconductor device

Details Method of fabricating gate electrode of semiconductor device Method of fabricating gate electrode of semiconductor device

2007-05-01

2007-05-01

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S589000, C438S595000, C257S330000, C257S332000, C257S336000, C257S344000, C257SE21435, C257SE21438

Reexamination Certificate

active

11026287

ABSTRACT:
A method of fabricating a gate electrode of a semiconductor device is disclosed. A disclosed method comprises growing a silicon epitaxial layer on a silicon substrate; making at least one trench through the epitaxial layer and filling the trench with a first oxide layer; etching the first oxide layer to form reverse spacers in the trench; depositing a second oxide layer and a polysilicon layer over the silicon substrate including the trench and the reverse spacers and forming a gate; implanting ions in the silicon substrate at both sides of the gate to form pocket-well and LDD areas; depositing a nitride layer over the silicon substrate including the gate and etching the nitride layer to form spacers; implanting ions using the spacers and the gate as a mask to make a source/drain region; and forming a silicide layer on the top of the gate electrode and the silicon epitaxial layer positioned on the source/drain region.

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