Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-09
2007-01-09
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S162000, C438S164000, C438S166000
Reexamination Certificate
active
10081767
ABSTRACT:
When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film contracts, so that a warp in the film occurs. Therefore, the quality of a resulting crystalline semiconductor film sometimes deteriorates. According to the present invention, it is characterized in that, after laser beam crystallization on the semiconductor film, heat treatment is carried out so as to reduce the warp in the film. Since the substrate contracts by the heat treatment, the warp in the semiconductor film is lessened, so that the physical properties of the semiconductor film can be improved.
REFERENCES:
patent: 4256681 (1981-03-01), Lindmayer
patent: 4814292 (1989-03-01), Sasaki et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5773327 (1998-06-01), Yamazaki et al.
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5854096 (1998-12-01), Ohtani et al.
patent: 5879977 (1999-03-01), Zhang et al.
patent: 5904770 (1999-05-01), Ohtani et al.
patent: 5907770 (1999-05-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5923997 (1999-07-01), Mitanaga et al.
patent: 5948496 (1999-09-01), Kinoshita et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 6014944 (2000-01-01), Aklufi et al.
patent: 6184068 (2001-02-01), Ohtani et al.
patent: 6197623 (2001-03-01), Joo et al.
patent: 6281057 (2001-08-01), Aya et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6319761 (2001-11-01), Zhang et al.
patent: 6326248 (2001-12-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6509579 (2003-01-01), Takeya et al.
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 2001/0003659 (2001-06-01), Aya et al.
patent: 2002/0013114 (2002-01-01), Ohtani et al.
patent: 0 651 431 (1995-05-01), None
patent: 07-183540 (1995-07-01), None
patent: 11-074536 (1999-03-01), None
patent: 2000-114172 (2000-04-01), None
patent: 2000-114173 (2000-04-01), None
patent: 2000-114526 (2000-04-01), None
patent: 2000-114527 (2000-04-01), None
Kimura et atl., “Device Simulation of Interface Roughness in Laser-Crystallized p-Si TFT's”, pp. 263-266, 1999, AM-LCD.
Abe et al., “High-Performance Poly-Crystalline Silicon TFTs Fabricated Using the SPC and ELA Methods”, pp. 85-88, Jul. 9-10 1998, AM-LCD.
Specifications and Drawings for application Ser. No. 10/078,240, “Method of Manufacturing a Semiconductor Device” Filing Date: Feb. 20, 2002, Inventors: Shunpei Yamazaki et al.
Specifications and Drawings for application Ser. No. 10/056,054, “Method for Manufacturing a Semiconductor Device”.
Mitsuki Toru
Takano Tamae
Yamazaki Shunpei
Costellia Jeffrey L.
Nguyen Thanh
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method of manufacturing a semiconductor film with little warp does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor film with little warp, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor film with little warp will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3785544