Multi-level semiconductor device with capping layer for...

Details Multi-level semiconductor device with capping layer for... Multi-level semiconductor device with capping layer for...

2007-05-29

2007-05-29

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S675000

Reexamination Certificate

active

10836297

ABSTRACT:
A multi-layer semiconductor device including copper interconnects with improved interlayer adhesion and a method for forming the same, the method including providing a semiconductor substrate comprising a dielectric insulating layer comprising copper containing interconnects the dielectric insulating layer and copper containing interconnects comprising an exposed surface; forming a first capping layer on the exposed surface; providing a treatment on the first capping layer to increase interface adhesion between the capping layer and the dielectric insulating layer; and, forming a second capping layer on the first capping layer.

REFERENCES:
patent: 6261951 (2001-07-01), Buchwalter et al.
patent: 6358832 (2002-03-01), Edelstein et al.
patent: 6913992 (2005-07-01), Schmitt et al.
patent: 6939797 (2005-09-01), Barth et al.

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