Method of driving a dual gated MOSFET

Details Method of driving a dual gated MOSFET Method of driving a dual gated MOSFET

2007-03-27

2007-03-27

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

11052264

ABSTRACT:
A method of driving a dual-gated MOSFET having a Miller capacitance between the MOSFET gate and drain includes preparing the MOSFET to switch from a blocking mode to a conduction mode by applying to the MOSFET shielding gate a first voltage signal having a first voltage level. The first voltage level is selected to charge the Miller capacitance and thereby reduce switching losses. A second voltage signal is applied to the switching gate to switch the MOSFET from the blocking to the conduction mode. The first voltage signal is then changed to a level selected to reduce the conduction mode drain-to-source resistance and thereby reduce conduction losses. The first voltage signal is returned to the first voltage level to prepare the MOSFET for being switched from the conduction mode to the blocking mode.

REFERENCES:
patent: 4941026 (1990-07-01), Temple
patent: 6690062 (2004-02-01), Henninger et al.

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