Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-03
2007-07-03
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S499000, C257SE23117, C438S107000
Reexamination Certificate
active
11376795
ABSTRACT:
An apparatus including a contact point formed on a device layer of a circuit substrate or an interconnect layer on the substrate; a first dielectric material; and a different second polymerizable dielectric material on the substrate and separated from the device layer or the interconnect layer by the first dielectric material following polymerization, the second dielectric material comprising a glass transition temperature of at least 250° C. and a thermal decomposition temperature of at least 400° C. A method including depositing a dielectric material and thermally treating the dielectric material at a temperature greater than the thermal decomposition temperature.
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Blakely , Sokoloff, Taylor & Zafman LLP
Everhart Caridad
Intel Corporation
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