Method for photolithography in semiconductor manufacturing

Details Method for photolithography in semiconductor manufacturing Method for photolithography in semiconductor manufacturing

2007-05-22

2007-05-22

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S627000, C438S678000, C438S687000, C257S040000, C257S059000, C257S072000, C257S076000, C257S347000, C257S387000, C430S311000, C430S270100

Reexamination Certificate

active

11347513

ABSTRACT:
The present disclosure relates generally to the manufacturing of semiconductor devices. In one example, a method for forming a portion of a semiconductor device includes forming a photo sensitive layer over a substrate, developing the photo sensitive layer to expose a portion of the substrate and to create a seed layer from at least a portion of the photo sensitive layer remaining after the developing, forming an etch stop layer only on the seed layer, and etching the substrate using the etch stop layer as a mask.

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patent: 6445006 (2002-09-01), Brandes et al.
patent: 6905958 (2005-06-01), Gracias et al.
patent: 6977135 (2005-12-01), Levenson
patent: 7008872 (2006-03-01), Dubin et al.
Dutta, Proc. IEEE International Conference on Semiconductor Electronics, ICSE, Dec. 7-9, 2004 pp. 1-4.
S. Wolf, Silicon Processing for the VLSI Era, Lattice Press (2986), p. 418-421).

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