Methods of manufacturing MOSFET devices

Details Methods of manufacturing MOSFET devices Methods of manufacturing MOSFET devices

2007-03-20

2007-03-20

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S306000

Reexamination Certificate

active

10765027

ABSTRACT:
Example methods of manufacturing MOSFET devices are disclosed. One example method may include an oxidation, an etching, an ion implanting for a threshold voltage control to form an elevated source/drain region and thereby implements an ultra shallow junction.

REFERENCES:
patent: 4830975 (1989-05-01), Bovaird et al.
patent: 5583064 (1996-12-01), Lee et al.
patent: 5817558 (1998-10-01), Wu
patent: 6054355 (2000-04-01), Inumiya et al.
patent: 6127699 (2000-10-01), Ni et al.
patent: 6309933 (2001-10-01), Li et al.
patent: 6465842 (2002-10-01), Nishinohara
patent: 6642130 (2003-11-01), Park

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