Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-11
2007-09-11
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S302000
Reexamination Certificate
active
10954838
ABSTRACT:
The present invention comprises a method for forming a semiconducting device including the steps of providing a layered structure including a substrate, a low diffusivity layer of a first-conductivity dopant; and a channel layer; forming a gate stack atop a protected surface of the channel layer; etching the layered structure selective to the gate stack to expose a surface of the substrate, where a remaining portion of the low diffusivity layer provides a retrograded island substantially aligned to the gate stack having a first dopant concentration to reduce short-channel effects without increasing leakage; growing a Si-containing material atop the recessed surface of the substrate; and doping the Si-containing material with a second-conductivity dopant at a second dopant concentration. The low diffusivity layer may be Si1-x-yGexZy, where Z can be carbon (C), xenon (Xe), germanium (Ge), krypton (Kr), argon (Ar), nitrogen (N), or combinations thereof.
REFERENCES:
patent: 6621131 (2003-09-01), Murthy et al.
patent: 2002/0109135 (2002-08-01), Murota et al.
patent: 2004/0072395 (2004-04-01), Liu
M.G. Peters, et al., “Single electron tunneling and suppression of short-channel effetcs in submicron silicon transistors”,Journal of Applied Physics, vol. 84, No. 9, pp. 5052-5056 (1998).
Leobandung Effendi
Mocuta Anda C.
Mocuta Dan M.
Zhu Huilong
Baumeister B. William
Li, Esq. Todd M. C.
Reames Matthew L.
Scully , Scott, Murphy & Presser, P.C.
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