Method of forming a high-k film on a semiconductor device

Details Method of forming a high-k film on a semiconductor device Method of forming a high-k film on a semiconductor device

2007-03-20

2007-03-20

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S745000, C438S754000, C438S755000

Reexamination Certificate

active

10854306

ABSTRACT:
According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film52is formed on a silicon substrate50by thermal oxidation, and a high dielectric constant insulating film54comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer56and high dielectric constant insulating film54are selectively removed in stages by a dry etching through a mask of the resist layer58, and subsequently, the residual portion of the high dielectric constant insulating film54and the silicon oxide film52are selectively removed by wet etching through a mask of polycrystalline silicon layer56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

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patent: WO2004/025718 (2004-03-01), None

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