Source/drain extensions having highly activated and...

Details Source/drain extensions having highly activated and... Source/drain extensions having highly activated and...

2007-07-24

2007-07-24

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S483000, C438S488000, C438S492000, C438S586000, C257SE21634

Reexamination Certificate

active

10955270

ABSTRACT:
A method for making a transistor within a semiconductor wafer. The method may include etching a recess at source/drain extension locations90and depositing SiGe within the recess to form SiGe source/drain extensions90. Dopants are implanted into the SiGe source/drain extensions90and the semiconductor wafer10is annealed. Also, a transistor source/drain region80, 90having a SiGe source/drain extension90that contains evenly distributed dopants, is highly doped, and has highly abrupt edges.

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