Method of forming bit line contact via

Details Method of forming bit line contact via Method of forming bit line contact via

2007-03-27

2007-03-27

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S399000

Reexamination Certificate

active

10714001

ABSTRACT:
A method of forming a bit line contact via. The method includes providing a substrate having a transistor with a gate electrode, drain region, and source region, forming a conductive layer overlying the drain region, conformally forming an insulating barrier layer overlying the substrate, blanketly forming a dielectric layer overlying the insulating barrier layer, and forming a via through the dielectric layer and insulating barrier layer, exposing the conductive layer.

REFERENCES:
patent: 6399438 (2002-06-01), Saito et al.
patent: 6458651 (2002-10-01), Rhodes
patent: 6664642 (2003-12-01), Koubuchi et al.
patent: 6690053 (2004-02-01), Amo et al.
patent: 6815752 (2004-11-01), Kitamura

Affiliated with

Also associated with

Rating

Method of forming bit line contact via does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming bit line contact via, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming bit line contact via will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3771972