Method for preventing metalorganic precursor penetration...

Details Method for preventing metalorganic precursor penetration... Method for preventing metalorganic precursor penetration...

2007-04-03

2007-04-03

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S778000, C438S798000, C257SE21577

Reexamination Certificate

active

10897479

ABSTRACT:
Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or reactively form an permeation barrier before a diffusion barrier material is deposited on the feature. The diffusion barrier may, for example, be deposited by CVD using metalorganic vapor reagents. The feature is then filled with copper metal and further processed to complete a dual damascene interconnect. The plasma predeposition treatment advantageously reduces the amount of permeation of the metalorganic reagent into the interlayer dielectric.

REFERENCES:
patent: 6028015 (2000-02-01), Wang et al.
patent: 6114259 (2000-09-01), Sukharev et al.
patent: 6503840 (2003-01-01), Catabay et al.
patent: 6537896 (2003-03-01), Catabay et al.
patent: 6677251 (2004-01-01), Lu et al.
patent: 6787453 (2004-09-01), Abell
patent: 6846756 (2005-01-01), Pan et al.
patent: 6913995 (2005-07-01), Ko
patent: 2003/0232510 (2003-12-01), Buchanan et al.

Affiliated with

Also associated with

Rating

Method for preventing metalorganic precursor penetration... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for preventing metalorganic precursor penetration..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preventing metalorganic precursor penetration... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3770223