Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2007-03-20
2007-03-20
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S411000, C438S770000, C257S506000, C257SE21193, C257SE21268, C257SE21285, C257S524000
Reexamination Certificate
active
10768611
ABSTRACT:
A method of manufacturing a MOS transistor is provided that achieves high-speed devices by reducing nitrogen diffusion to a silicon substrate interface due to redistribution of nitrogen and further suppressing its diffusion to a polysilicon interface, which prevents realization of faster transistors. An oxide film is exposed to a nitriding atmosphere to introduce nitrogen into the oxide film, and a thermal treatment process is performed in an oxidizing atmosphere. The thermal treatment process temperature in the oxidizing atmosphere is made equal to or higher than the maximum temperature in all the thermal treatment processes that are performed later than that thermal treatment process step.
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Wolf and Tauber; Silicon Processing for the VLSI Era vol. 1: Process Technology; pp. 57-58; First Ed. 1986; Lattice Press; Sunset Beach, CA.
Estrada Michelle
NEC Electronics Corporation
Ostrolenk Faber Gerb & Soffen, LLP
Toledo Fernando L.
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