Semiconductor sensor device using MEMS technology

Details Semiconductor sensor device using MEMS technology Semiconductor sensor device using MEMS technology

2007-03-20

2007-03-20

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S113000, C438S460000, C257SE21008, C257S019000, C257S421000

Reexamination Certificate

active

10894528

ABSTRACT:
A semiconductor sensor device is formed using MEMS technology by placing a thin layer of single-crystal silicon, which includes semiconductor devices, over a cavity, which has been formed in a semiconductor material. The thin layer of single-crystal silicon can be formed by forming the semiconductor devices in the top surface of a single-crystal silicon wafer, thinning the silicon wafer to a desired thickness, and then dicing the thinned wafer to form silicon layers of a desired size. The MEMS device can be used to implement a pressure sensor, microphone, temperature sensor, and a joystick.

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patent: 6378378 (2002-04-01), Fisher
Karl Behringer, University of Washington, “EE 539 Tm/M(S)E 599 Tm, Lecture B2, Micro/Nano/MEMS”, Spring 2003, [online], [retrieved on Jun. 28, 2004]. Retrieved from the Internet: <URL:http://courses.washington.edu/mengr599/tm—taya
otes/b2.pdf>, pp. 1-10 (unnumbered).

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